Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time
Die photo. Foundry standard compiler srams, efuse, PLL, and standard cells are all functional in the same chip
A new MRAM reference and sensing circuit that can achieve Sub-μA resolution and 17.5nS read access from -40C to 125C is presented in this paper. A trimmable current-mode latch-type sense amplifier (CLSA) with hybrid-resistance-reference (HRR) and cell location compensation is proposed to resolve small read window of MRAM. Silicon data measurement is presented to demonstrate a logic-process compatible, fully functional 16Mb perpendicular MRAM in 40nm CMOS process.
TSMC Accelerates 5G Mobile Communications Commercialization
Leading Industry to start 16nm FinFET RF Volume Production and 22nm Ultra Low Power RF Risk Production
TSMC is leading the charge into the process technology for 5G mobile communications, becoming the first foundry to use 16nm Fin Field-Effect-Transistor Radio Frequency (16nm FinFET RF) technology for volume production in the first half of 2018, and adopt 22nm Ultra Low Power RF (22nm ULP RF) technology for risk production in the second half of 2018.
Both technologies are critical to 5G communications protocol adoption. The 16nm FinFET RF process is for sub-6GHz 5G devices, while the 22nm ULP RF process is ideal for 5G millimeter wave (mmWave) chips. These two milestones also exemplify TSMC's commitment to invest and innovate in both advanced and specialty technologies to offer customers the most comprehensive and competitive technologies.
Industry’s most competitive Power and Die Size Advantages
TSMC’s 16nm FinFET RF process features the industry’s first three-dimensional FinFET transistors for RF applications. The technology provides approximately a 50% power reduction and a 40% die size reduction compared to 28nm low power (LP) RF planar technology. In addition to 5G mobile applications, the 16nm FinFET RF technology expands to next generation Wireless Local Area Network (WLAN 802.11ax) applications.
TSMC 16nm FinFET RF technology provides the most competitive power, and die size advantages; leading industry to start volume production of 5G sub-6GHz RF chips for customers
Industry-Leading mmWave RF Integration Solution
TSMC’s 22nm ULP RF industry-leading technology integrates key mmWave mobile communication devices such as an mmWave front end module that includes switches, low noise amplifiers (LNA), and power amplifiers (PA), onto a single chip. The CMOS process technology also reduces power consumption.
The 22nm ULP RF technology provides approximately a 30% power reduction and a 20% die size reduction compared to 28nm LP RF technology, offering outstanding competitive advantages for 5G mmWave RF chips. The process also supports high cut-off frequency devices, providing more flexible process design kits (PDK) and reliable simulation models that are ideal for development and production of 5G mobile and IoT IC applications.
TSMC's 22nm ULP RF technology provides industry-leading integration solution for mmWave chips targeting 5G mobile and IoT IC applications.
Did You Know?
Juniper Research believes that smart speakers will expand their role from simply accessing services to controlling IOT devices. This will drive the growth of IOT segments such as smart TV to 121.3% CAGR and wearable to a CAGR of 40.2%.
Power-optimized implementation for always-on IoT devices such as smart speakers has become extremely critical for functions such as voice activation.
TSMC’s 22nm ultra-low power (22ULP) technology was developed based on our industry-leading 28nm technology and completed all process qualifications in the fourth quarter of 2018. Compared to 28nm high-performance compact (28HPC) technology, 22ULP provides 10% area reduction with more than 30% speed gain or more than 30% power reduction for applications including image processing, digital TVs, set-top boxes, smartphones and consumer products.
Development of 22nm ultra-low leakage (22ULL) technology was completed and entered risk production in fourth quarter of 2018 to support IoT and wearable devices applications. New ULL device and ULL SRAM (static random access memory) can provide lower power consumption compared to 40ULP and 55ULP solutions.